A method for investigation of fluctuations in doping concentration and minority-carrier diffusion length in semiconductors by scanning electron microscope
Fluctuations in doping concentration and minority-carrier diffusion length can be observed using a scanning electron microscope, in the beam inducted current mode. Semiconductors, to which a Schottky-barrier contact has been applied, may be investigated. The measurement technique is simpler than other comparable methods. The scanning image shows the fluctuations with a spacial resolution of about 10 μm. Quantative determination of their size from the measured values is possible in certain doping ranges. Scanning images of fluctuations are presented for illustration.