Stable and unstable surface state charge in thermally oxidized silicon
Abstract
Two types of instabilities in MOS devices, occurring under the influence of a negative voltage bias on the metal electrode, can be observed by cooling under bias, from a temperature at which the bias was applied, to 77 K. In this paper we report on these effects as a function of oxidation temperature and ambient and of annealing treatments. The results suggest that the centres causing these instabilities are related to the centres causing the fixed oxide charge. It will be shown that the fast interface state density and the amount of fixed oxide charge depend on the low-temperature annealing conditions as well as on the geometry of the Aluminum-gate. This may explain the discrepancy found in the literature about the value of the fixed oxide charge as a function of oxidation temperature.
- Publication:
-
Solid State Electronics
- Pub Date:
- November 1976
- DOI:
- 10.1016/0038-1101(76)90100-3
- Bibcode:
- 1976SSEle..19..897B