Franz-Keldysh effect and photovoltaic edge of PbSe IR detectors
Abstract
Calculations of Franz-Keldysh effect in PbSe IR detectors are presented in this work. Photovoltaic edge of detectors and absorption edge measurements on homogeneous samples are related to these calculations as a function of temperature. The electric field present at the detector p- n junction has been evaluated by solving the complete Poisson equation. Its influence on the absorption coefficient has been considered in the temperature range 77 to 300°K. Final calculations show that the photoresponse tail of detectors cannot be explained only by the Franz-Keldysh effect at the junction. Ionized impurities could contribute to tailing by the presence of allowed states in the forbidden band and by a localized Franz-Keldysh effect.
- Publication:
-
Solid State Electronics
- Pub Date:
- July 1976
- DOI:
- 10.1016/0038-1101(76)90058-7
- Bibcode:
- 1976SSEle..19..605C
- Keywords:
-
- Electric Fields;
- Infrared Detectors;
- Lead Selenides;
- Photovoltaic Effect;
- Radiation Absorption;
- Temperature Effects;
- Absorptance;
- P-N Junctions;
- Poisson Equation;
- Solid State Physics;
- Time Response;
- Instrumentation and Photography