Doping, Schottky barrier and pn junction formation in amorphous germanium and silicon by rf sputtering

A method is described for preparing doped specimens of amorphous germanium and amorphous silicon by rf sputtering. We present conductivity and thermoelectric power measurements which demonstrate that doping has been achieved, and sketch some photoconductive properties of the material. To demonstrate device potential, we have fabricated Schottky barriers and pn junctions and present iV characteristics and a photo-voltage spectrum.