Large-signal characteristics of avalanche diode microwave amplifiers
Abstract
The influence exerted by an external oscillatory circuit and by input signal power in an avalanche diode amplifier operating in a reflection mode, and with specified conductance characteristics, on the gain, amplitude response, and frequency response of microwave amplifiers is discussed. A technique for measuring the large-signal dynamic conductance of avalanche diode devices and results of computer simulation of avalanche diode amplifier characteristics are discussed. Experimental data are reported for a p(+)nn(+) silicon avalanche diode.
- Publication:
-
Radioehlektronika
- Pub Date:
- October 1976
- Bibcode:
- 1976Radel..19...28R
- Keywords:
-
- Avalanche Diodes;
- Dynamic Characteristics;
- Microwave Amplifiers;
- Semiconductor Devices;
- Digital Simulation;
- Electrical Resistivity;
- Equivalent Circuits;
- Frequency Response;
- Reflectance;
- Silicon Junctions;
- Electronics and Electrical Engineering