Study of the metal-silicon contacts - Electric and physico-chemical aspects
Abstract
Theoretical models of conduction at the interface of a metal-semiconductor (MES) contact are presented with attention given to the surface barrier, charge transfer in a Schottky barrier, and tunnel current effects. Analysis and measurement of the electric properties of a metal-silicon contact are discussed, and ohmic contacts are considered. The physico-chemical analysis of chromium-silicon structures are characterized by electrical methods and by He ion retrodiffusion. Applications of metal-silicon contacts are discussed including Schottky diode power rectifiers, and Schottky photodetectors.
- Publication:
-
Ph.D. Thesis
- Pub Date:
- 1976
- Bibcode:
- 1976PhDT........80M
- Keywords:
-
- Metal Surfaces;
- Schottky Diodes;
- Semiconductor Junctions;
- Silicon Junctions;
- Barrier Layers;
- Charge Transfer;
- Chemical Properties;
- Chromium;
- Electric Contacts;
- Electron Tunneling;
- Helium Ions;
- Particle Diffusion;
- Physical Properties;
- Semiconducting Films;
- Electronics and Electrical Engineering