Analysis of shorts using the channel characteristics of field-effect transistors

The phenomenon of enhanced diffusion along a single dislocation in silicon was investigated. A technique was used to treat the shorts between emitter and collector of a bipolar transistor as the channel region of a junction field-effect transistor (FET) so that an analysis of the short could be carried out by using the channel characteristics of the FET. A saddle point model of the electric field distribution in the domain was developed to describe the behavior of both long and short channel effects. By further adapting the theory of enhanced phosphorus diffusion along the dislocation, to establish the doping profile of the channel, the operation of the FET in the linear domain was examined. Based on a set of electrical measurement, the identity of the shorts was established.