Properties of Cr-SiO2-n Si tunnel diodes
Abstract
Admittance, direct current and low frequency noise of Cr-SiO2-n Si tunnel diodes have been measured at different temperatures and found to be closely correlated. Surface potential as function of bias is obtained from the measured low frequency capacitance. Surface state distribution at different temperatures is determined using the low frequency capacitance and conductance techniques. The surface state capture cross section for electrons, obtained from conductance technique, is energy dependent and decreases towards the conduction band edge.
- Publication:
-
Ph.D. Thesis
- Pub Date:
- October 1976
- Bibcode:
- 1976PhDT........67K
- Keywords:
-
- Chromium;
- Electrical Properties;
- Silicon;
- Silicon Dioxide;
- Tunnel Diodes;
- Electron Energy;
- Fermi Surfaces;
- Metal Oxide Semiconductors;
- Electronics and Electrical Engineering