High voltage double diffused MOS transistors for integrated circuits
Abstract
Monolithic silicon integrated circuits, including double diffused MOS (DMOS) switching devices with a breakdown voltage in excess of 200 volts and the capability of conducting 3 to 5 Megahertz singals with peak currents greater than 0.25 amps, were fabricated for use in a unique, high resolution, real time, three dimensional, ultrasonic imaging system (ULISYS) for medical diagnosis. An experimental and theoretical study is presented of the DMOS structure, examining the electrical parameters of importance in high voltage switching applications, relating these electrical parameters to processing, structural, and material parameters and discussing the optimization of device structure and processing to obtain desired electrical behavior.
- Publication:
-
Ph.D. Thesis
- Pub Date:
- 1976
- Bibcode:
- 1976PhDT........51P
- Keywords:
-
- High Voltages;
- Integrated Circuits;
- Metal Oxide Semiconductors;
- Clinical Medicine;
- Diagnosis;
- Electrical Properties;
- Switching Circuits;
- Ultrasonic Tests;
- Electronics and Electrical Engineering