Acceptor behavior of implanted beryllium in gallium arsenide and gallium arsenide phosphide

Photoluminescence and electrical measurements were performed on Be-implanted GaAs and GaAs(1-x)Px(x approximately equal to 0.38). The temperature dependence of the peak emission energy and the intensity of the emission were made. The effects of annealing with SiO2 and Si3N4 encapsulation on electrical and optical behavior were studied. Hall effect and resistivity measurements were made on implanted GaAs and GaAs(1-x)Px as a function of anneal temperature. Various techniques were also used to obtain the distribution of implanted Be after the anneal. Red light emitting junctions fabricated by Be implantation in GaAs(1-x)Px were also studied. The effect of various acceptor profiles on the performance of such light emitting junctions was examined. The results obtained during these studies indicate that Be is a useful acceptor for implantation doping of GaAs and GaAs(1-x) for fabrication of devices requiring controlled profiles, good electrical activation, and efficient luminescence.