The transmission characteristics of MOS bucket-brigade circuits and their calculation with the aid of models
Abstract
MOS bucket-brigade circuits consist of a sequence of transistors, in which a capacitor is placed between gate and drain. The gates of the transistors are alternately connected to one or the other of two timing-pulse circuits. An absence of amplification processes makes it imperative to keep the transmission losses low. An investigation is conducted regarding the various factors which cause transmission losses and models which can represent the considered factors are developed. The models are used for a numerical calculation of the losses of the bucket-brigade circuits. Bucket-brigade circuits of different dimensions are implemented in Al-gate technology. The agreement between the computed and the measured transmission loss values is good. Bucket-brigade circuits with MOS tetrodes are also studied and the limitations of bucket-brigade circuits are discussed.
- Publication:
-
Ph.D. Thesis
- Pub Date:
- July 1976
- Bibcode:
- 1976PhDT........40A
- Keywords:
-
- Bucket Brigade Devices;
- Delay Lines;
- Metal Oxide Semiconductors;
- Network Analysis;
- Transistor Circuits;
- Transmission Loss;
- Channels (Data Transmission);
- Charge Coupled Devices;
- Circuit Diagrams;
- Computer Programs;
- Gates (Circuits);
- Signal Transmission;
- Substrates;
- Tetrodes;
- Waveforms;
- Electronics and Electrical Engineering