A two-dimensional simulation of MESFETs
Abstract
The performance limitations of GaAs metal semiconductor field-effect transistors (MESFET) were investigated, and methods to improve the present performance of these devices were determined. The diffusion current mechanism is included in the simulation. By using a full two-dimensional device simulation the operation of the MESFET was obtained subject to the limitations of the device processing parameters and the validity of the form of the transport equation model. It is shown that the drain current may be increased by placing a lower doped region between the gate and the drain of the MESFET where the highest field exists, since drift velocity saturation degrades the device performance. Furthermore the 0.4-micron gate length GaAs MESFET was shown to exhibit a negative-resistance region in the drain current characteristic. The equation formulation and extension to the Hermite bicubic shape function are described as well as the associated choices for the time evolution scheme.
- Publication:
-
Ph.D. Thesis
- Pub Date:
- October 1976
- Bibcode:
- 1976PhDT........26B
- Keywords:
-
- Computerized Simulation;
- Field Effect Transistors;
- Metals;
- Semiconductors (Materials);
- Two Dimensional Bodies;
- Two Dimensional Models;
- Additives;
- Gallium Arsenides;
- Hermitian Polynomial;
- Microwave Amplifiers;
- Transport Theory;
- Solid-State Physics