Nine Gigahertz Impedance Properties of PointContact Josephson Junctions.
Abstract
The complex RF impedance of tantalum point contact Josephson junctions has been measured at a frequency of 8.9 GHz. The impedance was measured at a frequency of 8.9 as a function of the dc bias current for a range of values of the RF current amplitude. Measurements were made for various values of I sub RF in the range 0.051 I sub m approximately less than I sub RF approximately less than 10 I sub m. For dc bias currents in the range zero less than or equal to I sub zero less than or equal to I sub mRF (where I sub mRF is the maximum zero voltage current in the presence of I sub RF), the real part of the normalized impedance r sub RF increases monotonically while the imaginary part x sub RF is inductive and decreases monotonically. As I sub zero is increased, the impedance remains basically constant until the dc bias voltage nears the voltage of the first Josephson step. Then rapid changes occur in the impedance.
 Publication:

Ph.D. Thesis
 Pub Date:
 1976
 Bibcode:
 1976PhDT........24C
 Keywords:

 Physics: Condensed Matter;
 Contact Resistance;
 Electrical Impedance;
 Josephson Junctions;
 Tantalum;
 Contact Potentials;
 Direct Current;
 Electrical Measurement;
 Semiconductor Junctions;
 SolidState Physics