Microstrip transferred electron amplifier for X-band frequencies
Abstract
A microstrip X-band transferred-electron amplifier was designed and tests were set up to find out whether commercially available Gunn diodes employed in wideband oscillator applications would serve well in amplifier applications. The microstrip amplifier circuits were tested on an alumina substrate and on a Mg-ferrite substrate. The microwave circuitry is described in detail. High gain is reported for the amplifier prototype tested on alumina substrate (14 dB at 10.93 GHz at 0.14 mW input power). Gain up to 22.5 dB at 3 dB-bandwidths in the range to 100 MHz is reported when the amplifier is run as an injection-locked oscillator. Applications appear limited since the output power remains nearly constant as input signals are stepped up.
- Publication:
-
Nachrichtentechnische Zeitschrift
- Pub Date:
- April 1976
- Bibcode:
- 1976NacZe..29..330E
- Keywords:
-
- Broadband Amplifiers;
- Gunn Diodes;
- Microstrip Devices;
- Microwave Amplifiers;
- Power Amplifiers;
- Strip Transmission Lines;
- Superhigh Frequencies;
- Aluminum Oxides;
- Electron Transfer;
- Equivalent Circuits;
- Microelectronics;
- Transmission Circuits;
- Electronics and Electrical Engineering