Measurement of Misalignments between the [111] Axes of GaP Deposits and Si Substrates by the X-Ray Divergent Beam Method
Abstract
Single-crystal GaP layers, about 3 μm thick, were deposited by the vapor growth technique on Si substrate wafers which were intentionally misorientated up to 18° from the (111) face. The divergent beam technique of X-ray diffraction was used for analyzing the lattice misorientation on the GaP on Si. The [111] axis of the GaP deposits and that of Si substrates were not exactly parallel. The dependence of the degree of angular misalignment between the two [111] axes on the substrate orientations is described.
- Publication:
-
Japanese Journal of Applied Physics
- Pub Date:
- August 1976
- DOI:
- 10.1143/JJAP.15.1435
- Bibcode:
- 1976JaJAP..15.1435I
- Keywords:
-
- Gallium Phosphides;
- Misalignment;
- Silicon;
- Single Crystals;
- Substrates;
- X Ray Diffraction;
- Crystal Growth;
- Crystal Lattices;
- Diffraction Patterns;
- Wafers;
- Wave Reflection;
- Solid-State Physics