Off-axis channeling disorder analysis
Abstract
A new method has been developed to obtain, by means of channeling measurements, the distribution of defects in a plane normal to a low-index axis direction. This method takes advantage of the response of nonsubstitutional atoms to the spatial distribution of the channeled ion flux. It represents then an extention of the flux-peaking effect used to locate foreign atoms in a single-crystal lattice. This method has been used to study the disorder introduced by 300-keV N+ implantations in Si with fluences ranging between 6×1014 and 1016 ions/cm2 and analyzed in situ with 2.0-MeV He+ backscattering. Flux distributions of channeled ions have been evaluated as a function of the impinging angle for the <111≳ and <110> crystal directions of a Si lattice. The dechanneling probability has been estimated as a function of the impinging angle and of the total number of scattering centers, on the basis of plural scattering treatment. The analysis of the experimental data indicates a departure from a uniform transverse distribution of scattering centers both along the <111> and the <110> directions for low damage levels. The analysis has been detailed together with the main assumptions, and the range of validity of the method has been defined.
- Publication:
-
Journal of Applied Physics
- Pub Date:
- December 1976
- DOI:
- 10.1063/1.322592
- Bibcode:
- 1976JAP....47.5206F
- Keywords:
-
- Crystal Defects;
- Crystal Structure;
- Ion Implantation;
- Order-Disorder Transformations;
- Backscattering;
- Channels;
- Ion Scattering;
- Light Elements;
- Silicon;
- Spatial Distribution;
- Solid-State Physics;
- 61.80.Pn;
- 81.20.Mc;
- 61.70.Wp