Photovoltaic properties of Cu2Se-AgInSe2 heterojunctions
Abstract
p-type Cu2Se/n-type AgInSe2 heterodiodes were fabricated by annealing Cu-plated AgInSe2 samples in Se at temperatures between 200 and 500°C. When operated as photovoltaic detectors, the diodes exhibit a peak quantum efficiency of 0.18 near 1.15 μ.
- Publication:
-
Journal of Applied Physics
- Pub Date:
- February 1976
- DOI:
- 10.1063/1.322623
- Bibcode:
- 1976JAP....47..619T
- Keywords:
-
- Energy Conversion Efficiency;
- Photovoltaic Cells;
- Semiconductor Junctions;
- Volt-Ampere Characteristics;
- Annealing;
- Capacitance;
- Copper Selenides;
- Indium Compounds;
- Room Temperature;
- Silver Compounds;
- Temperature Effects;
- Solid-State Physics;
- 85.60.Gz;
- 72.40.+w;
- 73.40.Lq;
- Photodetectors;
- Photoconduction and photovoltaic effects;
- Other semiconductor-to-semiconductor contacts p-n junctions and heterojunctions