Irradiate-anneal screening of total dose effects in semiconductor devices
Abstract
Judicious choice of radiation dose and parameter change acceptance criteria, absence of anomalous anneal phenomena, and absence of anomalous reirradiation effects are recognized as essential for a successful irradiation-anneal (IRAN) screening procedure to ensure that no device will fall, upon reirradiation, above parametric limits assigned for the worst case application. Reirradiation and irradiation-anneal behavior of various semiconductor devices are compared and those that do not lend themselves to IRAN screening are singled out. Information needed to judge the suitability of an IRAN type screening program is detailed. Reasons for success of the limited IRAN screening of flight parts for the Mariner Jupiter/Saturn (MJS '77) spacecraft are indicated.
- Publication:
-
IEEE Transactions on Nuclear Science
- Pub Date:
- December 1976
- DOI:
- 10.1109/TNS.1976.4328620
- Bibcode:
- 1976ITNS...23.2035S
- Keywords:
-
- Annealing;
- Irradiation;
- Radiation Dosage;
- Radiation Effects;
- Semiconductor Devices;
- Automatic Test Equipment;
- Component Reliability;
- Electronic Equipment Tests;
- Quality Control;
- Radiation Tolerance;
- Spacecraft Electronic Equipment;
- Spacecraft Reliability;
- Electronics and Electrical Engineering