Microwave power GaAs FET amplifiers
Abstract
The development of broad-band microwave amplifiers using state-of-the-art GaAs power FET's covering the 6-12-GHz frequency band is presented. A unique circuit topology incorporating an edge-coupled transmission line section for both impedance matching and input/output dc blocking is described. The microstrip circuit design of an X-band 1-W 22-dB-gain GaAs FET amplifier is also discussed. Microwave performance characteristics such as intermodulation, AM-to-PM conversion, and noise figure are included.
- Publication:
-
IEEE Transactions on Microwave Theory Techniques
- Pub Date:
- December 1976
- DOI:
- 10.1109/TMTT.1976.1129003
- Bibcode:
- 1976ITMTT..24..936T
- Keywords:
-
- Amplifier Design;
- Field Effect Transistors;
- Gallium Arsenides;
- Microwave Amplifiers;
- Power Amplifiers;
- Transistor Amplifiers;
- Frequency Response;
- Impedance Matching;
- Intermodulation;
- Microstrip Devices;
- Noise Intensity;
- Power Gain;
- Strip Transmission Lines;
- Superhigh Frequencies;
- Electronics and Electrical Engineering