Wide-band gallium arsenide power MESFET amplifiers
Abstract
The performance, with emphasis on wide bandwidth, that can be expected of linear medium power GaAs microwave MESFET (metal semiconductor field-effect-transistor) amplifiers is discussed. It starts with measured scattering parameters of devices and proceeds through computer-optimized device modeling, to amplifier circuit designs and performance results. It shows computed and measured octave bandwidth performance and reveals that decade bandwidth is feasible. It discusses single-ended and balanced amplifier design approaches. Some practical designs with performance results are presented, with circuit topologies which are easily realizable in microstrip.
- Publication:
-
IEEE Transactions on Microwave Theory Techniques
- Pub Date:
- June 1976
- DOI:
- 10.1109/TMTT.1976.1128853
- Bibcode:
- 1976ITMTT..24..342N
- Keywords:
-
- Amplifier Design;
- Broadband Amplifiers;
- Field Effect Transistors;
- Gallium Arsenides;
- Microwave Amplifiers;
- Power Amplifiers;
- Bandwidth;
- Computer Aided Design;
- Equivalent Circuits;
- Frequency Response;
- Metal Surfaces;
- Microstrip Devices;
- Performance Prediction;
- Power Gain;
- Strip Transmission Lines;
- Electronics and Electrical Engineering