A power silicon microwave MOS transistor
Abstract
Vertical MOS silicon power transistors for microwave power applications have been fabricated using an angle evaporation technique to position the gate electrode on the side of a mesa. These devices have produced 3-W output power at 1.5 GHz as a Class B amplifier and exhibit excellent linearity and noise properties. Device modeling has shown that parasitic capacitances are the chief factor limiting the frequency response, and the prospects for useful devices at 4 GHz are good.
- Publication:
-
IEEE Transactions on Microwave Theory Techniques
- Pub Date:
- June 1976
- DOI:
- 10.1109/TMTT.1976.1128847
- Bibcode:
- 1976ITMTT..24..305O
- Keywords:
-
- Amplifier Design;
- Metal Oxide Semiconductors;
- Microwave Amplifiers;
- Performance Prediction;
- Power Amplifiers;
- Silicon Transistors;
- Capacitance;
- Equivalent Circuits;
- Field Effect Transistors;
- Frequency Response;
- Gates (Circuits);
- Linearity;
- Noise Spectra;
- Volt-Ampere Characteristics;
- Electronics and Electrical Engineering