High-power C-band multiple-IMPATT-diode amplifiers
Abstract
The design considerations and performance characteristics of two high-power microwave reflection amplifiers that use multiple silicon IMPATT diodes are presented. The amplifiers employ microstrip hybrid-circuit-type power combiners to combine the individually matched IMPATT diodes. The first unit, a single-stage 4-diode amplifier, produced 8-W output with 6-dB gain, while the second 12-diode amplifier gave 15.8-W output at about 9-dB gain. The FM and AM noise added by these amplifiers has been measured with each amplifier driven to nearly full output. Use of microstrip hybrid-circuit power combiners appears to offer a simple and economical design approach for the implementation of microwave solid-state power amplifiers using multiple active devices.
- Publication:
-
IEEE Transactions on Microwave Theory Techniques
- Pub Date:
- May 1976
- DOI:
- 10.1109/TMTT.1976.1128831
- Bibcode:
- 1976ITMTT..24..249L
- Keywords:
-
- Amplifier Design;
- Avalanche Diodes;
- C Band;
- Microwave Amplifiers;
- Power Amplifiers;
- Hybrid Circuits;
- Microstrip Devices;
- Reflected Waves;
- Strip Transmission Lines;
- Electronics and Electrical Engineering