Application of the equivalent circuit model for semiconductors to the study of Au-doped p-n junctions under forward bias

The Green-Shewchun (1974) dc equivalent-circuit analysis technique is applied to Sah transmission line model (1971), so that the Sah nonequilibrium small-signal equivalent circuit can be used to obtain dc solutions at any applied voltage via application of a Newton-Raphson iteration technique for solving nonlinear equations, and for analysis of devices with arbitrary doping profile. The paper compares theoretical and experimental results of dc and small-signal behavior of gold-doped p(+)-n and n(+)-p junctions under forward bias. Small-signal conductance-voltage and capacitance-voltage characteristics of Au-doped Si junctions are described successfully at both low and high forward biases when conductivity modulation of the quasi-neutral base region dominates.