Temperature transients in IMPATT diodes
Abstract
A model is developed for calculating the thermal transient response of an IMPATT diode with a diamond heat sink in order to accurately predict junction heating or cooling when the diode is pulsed into or out of avalanche. Thermal responses for diode turn-on and turn-off and for power surges are found for several IMPATT designs (Si or GaAs). Results are compared to those for a model using a transcendental equation, and rough agreement is found. Transient response is shown to vary with chip size, while temperatures can shift appreciably in time intervals of the order of microseconds of fractions thereof. Two approximations, neither requiring computer programs, are advanced to replace the time constant, which is deemed invalid for IMPATT diodes in that the response fails to approximate an exponential curve.
- Publication:
-
IEEE Transactions on Electron Devices
- Pub Date:
- May 1976
- DOI:
- 10.1109/T-ED.1976.18435
- Bibcode:
- 1976ITED...23..494O
- Keywords:
-
- Avalanche Diodes;
- Heat Sinks;
- Temperature Distribution;
- Thermal Stability;
- Transient Response;
- Design Analysis;
- Gallium Arsenides;
- Junction Diodes;
- Operating Temperature;
- Power Conditioning;
- Silicon Junctions;
- Electronics and Electrical Engineering