Improved circuit-device interface for microwave bipolar power transistors
Abstract
Several improvements in the mounting and interconnection of bipolar microwave power transistors are described. A plated heat sink applied to thinned transistor pellets decreases the junction temperature for a given dissipation level by approximately a factor of 2. A new, low-parasitic-BeO carrier provides improved power sharing between cells and better high-frequency performance as illustrated by a CW power output of 4 W at 5 GHz with 6-dB gain. Finally, a new etched-line interconnection system is discussed that promises to become a highly reproducible, low-cost replacement for the widely used, but troublesome, multiple wire bonds.
- Publication:
-
IEEE Journal of Solid-State Circuits
- Pub Date:
- April 1976
- DOI:
- 10.1109/JSSC.1976.1050712
- Bibcode:
- 1976IJSSC..11..256B
- Keywords:
-
- Bipolar Transistors;
- Heat Sinks;
- Junction Transistors;
- Microwave Circuits;
- Power Gain;
- Solid-Solid Interfaces;
- Frequency Response;
- Impedance Matching;
- Pellets;
- Power Amplifiers;
- Power Conditioning;
- Thermal Stability;
- Electronics and Electrical Engineering