Avalanche diode oscillators. III - Design and analysis: The future
Abstract
The paper develops intrincate versions of the 'avalanche plus drift' combinations. The double-drift structure is examined along with the possibility of a double-avalanche structure, and the properties of a heterojunction device are outlined. A critical account is given of the various modeling techniques which may be used to give a theoretical account of the behavior of the device. The derivation of some of the small signal parameters is considered. A diffusion-inclusive description of the avalanche-zone properties is presented, and a simple model for the description of high-efficiency structures is discussed
- Publication:
-
International Journal of Electronics
- Pub Date:
- June 1976
- Bibcode:
- 1976IJE....40..521C
- Keywords:
-
- Avalanche Diodes;
- Design Analysis;
- Mathematical Models;
- Microwave Oscillators;
- Performance Prediction;
- Technological Forecasting;
- Additives;
- Electric Fields;
- Energy Conversion Efficiency;
- Gallium Arsenides;
- Indium Phosphides;
- Electronics and Electrical Engineering