Improved performance of millimetre-wave IMPATT diodes on type-IIa diamond heatsinks
Abstract
Thermal resistance and RF data are presented for K sub a, V and W-band silicon double-drift IMPATT diodes employing diamond heatsinks. A power level of 620 mW at 7.7% efficiency has been achieved at 101 GHz.
- Publication:
-
Electronics Letters
- Pub Date:
- December 1976
- DOI:
- 10.1049/el:19760517
- Bibcode:
- 1976ElL....12..675E
- Keywords:
-
- Avalanche Diodes;
- Diamonds;
- Heat Sinks;
- Microwave Equipment;
- Millimeter Waves;
- Thermal Resistance;
- Ambient Temperature;
- Epitaxy;
- Fabrication;
- Temperature Effects;
- Thermal Conductivity;
- Electronics and Electrical Engineering