Novel GaAs metallised diode configuration to reduce skin-effect contributions at high frequencies
Abstract
A highly reliable metallized GaAs Ta-Schottky-barrier diode with native-oxide passivation has been developed. The zero bias cutoff frequency of these diodes is greater than 1000 GHz when measured accurately near 60 GHz, with a zero-bias junction capacitance near 0.1 pF. This zero-bias cutoff frequency is approximately twice the value for a comparable nonmetallized device. The letter describes the r.f. properties and the structure of the device.
- Publication:
-
Electronics Letters
- Pub Date:
- November 1976
- DOI:
- 10.1049/el:19760498
- Bibcode:
- 1976ElL....12..648C
- Keywords:
-
- Gallium Arsenides;
- Microwave Circuits;
- Millimeter Waves;
- Schottky Diodes;
- Skin Resistance;
- Capacitance;
- Frequency Response;
- Metallizing;
- Parametric Amplifiers;
- Q Factors;
- Varactor Diodes;
- Electronics and Electrical Engineering