Electrical traps in GaAs microwave F.E.T.s
Abstract
Described is a rapid, sensitive technique for determining the activation energies for electron traps present in the channel of GaAs microwave field-effect transistors. The measurements can be made directly on the FETs. Taken together with systematic variation of growth procedures, the method can be applied toward identification and elimination of the traps.
- Publication:
-
Electronics Letters
- Pub Date:
- June 1976
- DOI:
- 10.1049/el:19760229
- Bibcode:
- 1976ElL....12..297A
- Keywords:
-
- Activation Energy;
- Electron Capture;
- Field Effect Transistors;
- Gallium Arsenides;
- Microwave Circuits;
- Capacitance;
- Metal Oxide Semiconductors;
- Schottky Diodes;
- Transient Response;
- Trapped Particles;
- Electronics and Electrical Engineering