GaAs power F.E.T.s with semi-insulated gates
Abstract
GaAs semi-insulated-gate FETs (SIGFETs) have been fabricated by Ar(+) bombardment in the gate region. The dc characteristics and microwave performance are compared with those of conventional power MESFETs fabricated from the same slice. Up to 2.9W output power with 4-dB gain has been obtained from SIGFET devices at 8 GHz.
- Publication:
-
Electronics Letters
- Pub Date:
- April 1976
- DOI:
- 10.1049/el:19760149
- Bibcode:
- 1976ElL....12..192M
- Keywords:
-
- Field Effect Transistors;
- Gallium Arsenides;
- Gates (Circuits);
- Microwave Amplifiers;
- Power Amplifiers;
- Transistor Amplifiers;
- Amplifier Design;
- Fabrication;
- Ion Implantation;
- Power Efficiency;
- Electronics and Electrical Engineering