Equivalent-circuit parameters of a silicon avalanche photodiode
Abstract
The dependence of the relative phase shift in a silicon avalanche photodiode on the multiplication is used for the determination of the intrinsic response time in the avalanche region. The value of the intrinsic response time of a silicon avalanche photodiode was found to be 0.85 ps. The procedure used to estimate the equivalent-circuit parameters of the detector is also described.
- Publication:
-
Electronics Letters
- Pub Date:
- March 1976
- DOI:
- 10.1049/el:19760113
- Bibcode:
- 1976ElL....12..144O
- Keywords:
-
- Avalanche Diodes;
- Equivalent Circuits;
- Photodiodes;
- Silicon;
- Independent Variables;
- Network Analysis;
- Phase Shift;
- Signal Measurement;
- Time Response;
- Electronics and Electrical Engineering