Dose dependence of the photon emission from sputtered aluminum atoms during helium irradiation
Abstract
Polycrystalline aluminum samples are irradiated with 40-keV He+. At moderate target temperatures (∼0.3Tm) a prominent and distinct enhancement of the light intensity from sputtered excited aluminum atoms is observed after implantation to a critical dose of 4×1017 He+/cm2. It is shown that this effect is associated with a sudden increase in the erosion rate of Al and in the surface exfoliation due to radiation blistering. At higher target temperatures (∼0.7Tm) a less pronounced increase in the photon intensity and a different surface structure is observed.
- Publication:
-
Applied Physics Letters
- Pub Date:
- November 1976
- DOI:
- 10.1063/1.89178
- Bibcode:
- 1976ApPhL..29..545B
- Keywords:
-
- Aluminum;
- Atomic Excitations;
- Ion Irradiation;
- Radiation Effects;
- Reactor Materials;
- Sputtering;
- Chemical Attack;
- Electropolishing;
- Fusion Reactors;
- Ion Beams;
- Line Spectra;
- Luminous Intensity;
- Polycrystals;
- Temperature Effects;
- Plasma Physics;
- 61.80.Ki;
- 79.20.Mb;
- 28.40.Gp;
- Positron emission