Efficient lattice-matched double-heterostructure LED's at 1.1 μm from GaxIn1-xAsyP1-y
Abstract
The growth and operation of lattice-matched double-heterostructure InP/Ga0.17In0.83As0.34P0.66/InP light-emitting diodes is reported. These diodes have an emission wavelength of 1.1 μm and quantum efficiencies of 4%.
- Publication:
-
Applied Physics Letters
- Pub Date:
- May 1976
- DOI:
- 10.1063/1.88831
- Bibcode:
- 1976ApPhL..28..499P
- Keywords:
-
- 85.60.Jb;
- 78.60.Fi;
- Light-emitting devices;
- Electroluminescence