Experimental investigation of the life of semiconductor devices. III - Bulk breakdown mechanisms and transistor life tests in switching operation
Abstract
A method is proposed in which transistors are loaded as common base inverters in switching operation with fixed 50 Hz or higher repetition frequency, at exactly controlled and determined switching-on and -off transient energy. This method permits the economical examination of large samples and is useful mainly as a screen test for the quick identification of samples with hidden structural defects. Such tests supported by microphotographs of failed samples seem to be in accordance with the analytical results of a bulk degradation process treated here and emphasize the necessity of a flawless geometrical structure of such devices.
- Publication:
-
Acta Technica
- Pub Date:
- 1976
- Bibcode:
- 1976AcTec..82..121K
- Keywords:
-
- Accelerated Life Tests;
- Component Reliability;
- Electrical Faults;
- Failure Analysis;
- Service Life;
- Switching Circuits;
- Transistors;
- Circuit Diagrams;
- Commutation;
- Electric Pulses;
- High Current;
- P-N-P Junctions;
- Photomicrography;
- Stress Cycles;
- Electronics and Electrical Engineering