Various multivalent dopants were investigated with the goal of obtaining non-volatile multilevel memory devices in silicon using the Field Induced Trapping (FIT) effect. The test structures included P-N junctions, Schottky diodes, and resistive bars fabricated in silicon substrates suitably doped with multivalent dopants. Novel device effects were observed and are described. Suitability of various dopants was determined.
California Univ., Los Angeles Report
- Pub Date:
- January 1975
- Schottky Diodes;
- Field Effect Transistors;
- Semiconductor Devices;
- Electronics and Electrical Engineering