Long term memory in junction devices using multivalent trapping impurities in silicon

Various multivalent dopants were investigated with the goal of obtaining nonvolatile multilevel memory devices in silicon using the Field Induced Trapping (FIT) effect. The test structures included Schottky diodes and resistive bars fabricated in silicon substrates suitably doped with multivalent dopants. Novel device effects were observed and are described. A model for a negative differential resistance Schottky barrier oscillator is proposed. Oscillations with frequencies voltage turnable over three decades were observed. Thermal switching in resistive bars is described and a theoretical treatment presented. Two separate models employing entirely different mechanisms are analyzed. A theoretical treatment on trapping effects in p-n junctions under low injection conditions is presented.