New technology for manufacturing silicon high voltage diodes
Abstract
A rational method of preparation was developed for cheap high voltage diodes with the following specifications: VRRM = 15 kV, IFAV = 5mA, f = 20 kHz. Several diffused silicon slices are stacked and soldered together by RF heating. Then they are divided by wire-cutting. A jig-system was developed for the mounting of the diodes which can be employed during the contacting, etching, passivating, molding, and testing of the diodes. The failure rate of these diodes under severe operating conditions is of the order of 6 per million/h.
- Publication:
-
Final Report Siemens A.G
- Pub Date:
- December 1975
- Bibcode:
- 1975siem.rept.....L
- Keywords:
-
- Diodes;
- Manufacturing;
- Silicon;
- Failure Analysis;
- High Voltages;
- Radio Frequency Heating;
- Electronics and Electrical Engineering