Structures and characteristics of 400A-300V monolithic high power transistors
Abstract
Two types of high power n-p-nu-n transistors which have collector current ratings of 400 amps and collector-emitter voltage ratings of 300 V have been developed. The first is a conventional one and the second is a monolithic Darlington-connected one. Both have the same 40 mm Phi pellet size. They are produced by triple diffusion techniques. The structures, features and electrical characteristics of these transistors are described.
- Publication:
-
Power Electronics Specialists Conference
- Pub Date:
- June 1975
- Bibcode:
- 1975pes..conf..274S
- Keywords:
-
- Electrical Properties;
- Integrated Circuits;
- N-P-N Junctions;
- Power Gain;
- Semiconductor Devices;
- Transistor Circuits;
- Design Analysis;
- Junction Transistors;
- Minority Carriers;
- Power Transmission;
- Thermal Resistance;
- Volt-Ampere Characteristics;
- Electronics and Electrical Engineering