Specification of the dynamic response of NPN/-/N power transistors
Abstract
Standard dynamic transistor parameters have proven to be inadequate in defining the response of NPN(-)N transistors in high frequency power circuits. Two new parameters, related to the process of conductivity modulation of the N(-) collector, are proposed to describe the switching characteristics associated with the quasi-saturation region.
- Publication:
-
Power Electronics Specialists Conference
- Pub Date:
- June 1975
- Bibcode:
- 1975pes..conf..262O
- Keywords:
-
- Dynamic Response;
- N-P-N Junctions;
- Network Analysis;
- Transistor Circuits;
- High Voltages;
- Modulation;
- Network Synthesis;
- Saturation;
- Switching Circuits;
- Time Constant;
- Electronics and Electrical Engineering