Stored charge transistor
Abstract
A stored charge device of the general type designated as an MNOS field-effect transistor, has its operation improved by embedding a thin metal layer between two insulating films used in the transistor. The embedded metal layer technique is used to provide a two-terminal thin-film stored charge device, consisting of a metal-insulator-embedded-metal-insulator-metal, sandwich structure which can be used in high-density memory arrays.
- Publication:
-
National Aeronautics and Space Administration Report
- Pub Date:
- September 1975
- Bibcode:
- 1975nasa.reptV....M
- Keywords:
-
- Electrical Insulation;
- Energy Storage;
- Field Effect Transistors;
- Equipment Specifications;
- Patents;
- Sandwich Structures;
- Silicon Nitrides;
- Silicon Oxides;
- Thin Films;
- Electronics and Electrical Engineering