High temperature beryllium oxide capacitor
Abstract
A capacitor suitable for use in environments where the temperature is as high as 1500 C is described. The capacitor is comprised of a BeO wafer which is off-sputtered on each side and an electrode of Iridium on each side which is deposited by sputtering, or ion plating. A barrier layer of BeO is deposited on one or both of the electrodes to prevent diffusion bonding of the electrodes of adjacent capacitors due to temperature, pressure, and vacuum when several capacitors are stocked.
- Publication:
-
National Aeronautics and Space Administration Report
- Pub Date:
- December 1975
- Bibcode:
- 1975nasa.reptR....L
- Keywords:
-
- Beryllium Oxides;
- Capacitors;
- High Temperature;
- Diffusion Electrodes;
- Electric Connectors;
- Iridium;
- Patents;
- Sputtering;
- Wafers;
- Electronics and Electrical Engineering