The effects of diffusion on quenched domain oscillations of a transferred electron device
Abstract
Analytical solutions for the domain shape were found to approximate forms of the nonlinear differential equation for excess charge carrier density with nonzero diffusion. Modifications to a previous analytical model of a Transferred Electron Device (TED) in the diffusionless case were made, yielding analytical expressions for device admittance when operating in the quenched domain mode. In spite of large changes in domain shape, TED operation is not much affected by diffusion.
- Publication:
-
Unknown
- Pub Date:
- 1975
- Bibcode:
- 1975edqd.book.....M
- Keywords:
-
- Charge Transfer Devices;
- Electron Diffusion;
- Oscillations;
- Bias;
- Carrier Mobility;
- Charge Carriers;
- Differential Equations;
- Diffusion Coefficient;
- Domains;
- Electric Fields;
- Electron Transfer;
- Mathematical Models;
- Nonlinear Equations;
- Quenching;
- Solid-State Physics