The effect of the inhomogeneity of the distribution of specific resistance on the electrophysical properties of p-i-n structures

The paper investigates the micro- and macroinhomogeneities of silicon-lithium compensated p-i-n detectors of nuclear radiation. The relationship between the electrophysical properties of the material and its initial parameters (specific resistance of the silicon, dislocation density, oxygen content) is considered. A method based on the interlayer polarization effect is developed for determining the thickness and specific resistance of the compensated region, the value of the successive resistance of the detectors and inhomogeneities of structure and content. The conductivity of the p-n junction and the nature of the metal-semiconductor contact are examined. The effect of surface finishing of the junctions on the distribution of potential and electric field in the compensated region is studied along with the aging characteristics of the detectors.