New concepts in IMPATT diode noise
Abstract
A nonlinear noise theory which provides an improved description of IMPATT diodes noise is reviewed, and several new concepts are discussed. Among the latter are resonant terms in the shortcircuit current spectrum; the differential avalanche frequency, and the noise dependence of the reverse saturation current. The theory can be used to develop powernoise modeling capability for designing IMPATT diodes. An example of determining optimum design is given where constant output power contours at M = 45 dB are obtained for a 10 GHz uniformly doped GaAs IMPATT diode. Numerical calculations of noise measures and carriertonoise ratios are presented.
 Publication:

Active semiconductor devices for microwaves and integrated optics
 Pub Date:
 1975
 Bibcode:
 1975asdm.proc..397K
 Keywords:

 Avalanche Diodes;
 Electromagnetic Noise Measurement;
 Gallium Arsenides;
 Microwave Oscillators;
 Signal To Noise Ratios;
 Electronic Equipment Tests;
 Microwave Amplifiers;
 Negative Resistance Circuits;
 Noise Spectra;
 Short Circuits;
 Electronics and Electrical Engineering