Highly reliable pulsed GaAs Read diodes
Abstract
The RF performance and reliability of double drift hybrid Read structures grown by LPE (Liquid Phase Epitaxy) deposition, and of GaAs high-efficiency IMPATT devices with a p/+/-n/+/-n-n/+/ structure formed by sequential epitaxial deposition were evaluated. It is shown that p-n junction IMPATT devices are a viable alternative to Pt Schottky barrier devices, particularly with respect to reliability. Peak pulsed powers of 20 W in X-band at 25% duty cycle using single drift structures are possible, and higher powers using double drift structures are probable.
- Publication:
-
Active semiconductor devices for microwaves and integrated optics
- Pub Date:
- 1975
- Bibcode:
- 1975asdm.proc..367G
- Keywords:
-
- Avalanche Diodes;
- Gallium Arsenides;
- Microwave Oscillators;
- Pulsed Radiation;
- Continuous Radiation;
- Epitaxy;
- P-N Junctions;
- Power Efficiency;
- Reliability Analysis;
- Superhigh Frequencies;
- Electronics and Electrical Engineering