Effects of shadows on photocurrent-compensated integrated circuits
Abstract
Simple calculations show that high-z components, such as wires, capacitors, and solder bonds, can easily cast shadows with edges only 25-micrometers wide when illuminated with a low-energy (E - 60 keV) X-ray beam. If one of these shadows falls between a photocurrent-compensating diode-transistor pair, the mismatch in dose can drastically reduce the transient hardness of the integrated circuit. Results of pulsed X-ray tests on the Texas Instruments RSN 54L 71 R-S flip-flop and RSN 54L 00 quad two-input nand gate showed that the upset threshold of a given state of the flip-flop was lowered by as much as a factor of 29 and the nand gate by a factor of 5.7.
- Publication:
-
Interim Report Aerospace Corp
- Pub Date:
- April 1975
- Bibcode:
- 1975aerc.rept.....V
- Keywords:
-
- Integrated Circuits;
- Photoelectricity;
- Radiation Hardening;
- Electric Current;
- Radiation Effects;
- X Rays;
- Electronics and Electrical Engineering