Heterogeneous states of degenerate semiconductors in the region of a first-order phase transition

Some features of phase transformations in semiconductor systems with high dielectric constants and large interphase surface energies are considered under conditions of strong doping. For electron densities exceeding a certain critical value, the phase transition in these systems occurs via an intermediate heterogenous phase consisting of layers with the structure of phases I and II. Peculiarities of the diagrams of state and characteristics of the heterogenous structures produced, which are related to long range Coulomb forces or to the electron-gas Fermi surface, are investigated in cases when redistribution of the charge densities is relatively small. Heterogeneous states with strongly inhomogeneous ion distribution and almost homogeneous electron distribution are also considered.