Technology and microwave performance of a 1-micron GaAs Schottky-barrier field-effect transistor

Gallium arsenide Schottky-barrier field-effect transistors are used to design amplifiers which operate at microwave frequencies at about 10 GHz. The growth of uniformly doped thin epitaxial layers of GaAs on semiinsulating substrates is discussed and a description is presented of a method for obtaining very small ohmic and nonohmic metallization patterns on the layer surface. Attention is given to a technique for bonding the device into a microwave package. The measurement and evaluation of the device microwave properties are also considered.