Modern SBC technology for high-speed bipolar semiconductor memories
Abstract
The requirements which have to be satisfied for the design of high-speed bipolar memories are related to a significant improvement of the transistor HF characteristics and an enhancement of the component density. Approaches for the solution of the problems connected with these requirements are discussed. Advances in standard buried collector technology are considered, taking into account operational aspects, the dimensioning of lateral structures, questions of base and base contact diffusion, aspects of metallization, and two-layer connecting methods. Attention is also given to technological trends regarding a further increase in signal processing rates.
- Publication:
-
Siemens Forschungs und Entwicklungsberichte
- Pub Date:
- 1975
- Bibcode:
- 1975SiFoE...4..238B
- Keywords:
-
- Bipolar Transistors;
- Computer Storage Devices;
- Semiconductor Devices;
- Transistor Circuits;
- Fabrication;
- Integrated Circuits;
- Metal Oxide Semiconductors;
- Microminiaturization;
- Network Synthesis;
- Signal Processing;
- Substrates;
- Electronics and Electrical Engineering