Packaging effects on semiconductor device radiation response

This report examines the effect of FXR-stimulated, re-emitted radiation from the packages of three planar-epitaxial transistors and two high-level NAND gate integrated circuits on the photocurrent response of the devices. Experimental measurements were made on the five devices in both low- and high-engery photon (FXR) environments. The experimental results are compared with a radiation transport analysis (including use of the SANDYL code) of the device package, materials, and proton energy spectrum. This work adds further verification to a procedure for extending simulation test data to a real photon environment.